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NVB125N65S3
onsemi

NVB125N65S3

MFR #NVB125N65S3

FPN#NVB125N65S3-FL

MFRonsemi

Part DescriptionN-Channel 650 V 24A (Tc) 181W (Tc) Surface Mount DPAK-3 (TO-263-3)
Datasheet
56976-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVB125N65S3
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1940pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current24A (Tc)
Maximum Drain to Source Resistance125 mOhm @ 12A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 590µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation181W (Tc)
Maximum Pulse Drain Current60A
Maximum Total Gate Charge46nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge19nC
Typical Gate to Source Charge12nC