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NVB110N65S3F
onsemi

NVB110N65S3F

MFR #NVB110N65S3F

FPN#NVB110N65S3F-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 30A (Tc) TO-263-3 T/R
Datasheet
56975-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVB110N65S3F
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance2560pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current30A (Tc)
Maximum Drain to Source Resistance110 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage5V @ 3mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation240W (Tc)
Maximum Pulse Drain Current69A
Maximum Total Gate Charge58nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeD2PAK-3 (TO-263)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge23nC
Typical Gate to Source Charge19nC