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onsemi

NVATS5A113PLZT4G

MFR #NVATS5A113PLZT4G

FPN#NVATS5A113PLZT4G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 60V 38A(Ta) 60W(Tc) Surface Mount, TO-252-3
Datasheet
100362-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVATS5A113PLZ
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage4V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2400pF
Input Capacitance Test Voltage20V
Life Cycle StatusObsolete
Maximum Continuous Drain Current38A (Ta)
Maximum Drain to Source Resistance29.5 mOhm @ 18A, 10V
Maximum Gate to Source Threshold Voltage2.6V @ 1mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation60W (Tc)
Maximum Pulse Drain Current114A
Maximum Total Gate Charge55nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK/ATPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge12nC
Typical Gate to Source Charge7.5nC