(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

NVATS5A106PLZT4G

MFR #NVATS5A106PLZT4G

FPN#NVATS5A106PLZT4G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 40V 33A (Ta) TO-252-3 T/R
Datasheet
100360-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNVATS5A106PLZ
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1380pF
Input Capacitance Test Voltage20V
Life Cycle StatusObsolete
Maximum Continuous Drain Current33A (Ta)
Maximum Drain to Source Resistance25 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage2.6V @ 1mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation48W (Tc)
Maximum Pulse Drain Current100A
Maximum Total Gate Charge29nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK/ATPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.9nC
Typical Gate to Source Charge6.4nC