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NUS5530MNR2G
onsemi

NUS5530MNR2G

MFR #NUS5530MNR2G

FPN#NUS5530MNR2G-FL

MFRonsemi

Part DescriptionTransistor General Purpose NPN, P-Channel 35V PNP, 20V P-Channel 2A PNP, 3.9A P-Channel Surface Mount, 8-DFN
Datasheet
56938-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNUS5530MN
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusLast Time Buy
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 3.6V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage12V
Input Capacitance710pF
Input Capacitance Test Voltage5V
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current3.9A
Maximum Drain to Source Resistance60 mOhm @ 1A, 3.6V
Maximum Gate to Source Threshold Voltage1.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.3W
Maximum Pulse Drain Current20A
Maximum Total Gate Charge22nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.6nC
Typical Gate to Source Charge1.2nC