
NTZD3155CT1G
MFR #NTZD3155CT1G
FPN#NTZD3155CT1G-FL
MFRonsemi
Part DescriptionTrans MOSFET N/P-CH 20V 0.54A/0.43A, SOT-563
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTZD3155C |
Packaging Type | Tape and Reel |
Packaging Quantity | 4000 |
Lifecycle Status | Active |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | N and P-Channel |
Drain Source Voltage | 20V |
Drive Voltage | 1.8V, 4.5V |
FET Feature | Standard |
FET Options | Complementary |
FET Type | Array |
Gate to Source Voltage | ±6V |
Input Capacitance | 150pF, 175pF |
Input Capacitance Test Voltage | 16V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 540mA (Ta), 430mA (Ta) |
Maximum Drain to Source Resistance | 550 mOhm @ 540mA, 4.5V, 900 mOhm @ 430mA, 4.5V |
Maximum Gate to Source Threshold Voltage | 1V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 250mW (Tj) |
Maximum Pulse Drain Current | 1.5A, 750mA |
Maximum Total Gate Charge | 2.5nC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | -55°C (TJ) |
PK Package Dimensions Note | Popular package size 74% from Suppliers use this Dimension |
Package Type | SOT-563 |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 350pC, 400pC |
Typical Gate to Source Charge | 200pC, 300pC |