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NTZD3155CT1G

NTZD3155CT1G

MFR #NTZD3155CT1G

FPN#NTZD3155CT1G-FL

MFRonsemi

Part DescriptionTrans MOSFET N/P-CH 20V 0.54A/0.43A, SOT-563
Quote Onlymore info
Multiples of: 4000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTZD3155C
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureStandard
FET OptionsComplementary
FET TypeArray
Gate to Source Voltage±6V
Input Capacitance150pF, 175pF
Input Capacitance Test Voltage16V
Life Cycle StatusActive
Maximum Continuous Drain Current540mA (Ta), 430mA (Ta)
Maximum Drain to Source Resistance550 mOhm @ 540mA, 4.5V, 900 mOhm @ 430mA, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation250mW (Tj)
Maximum Pulse Drain Current1.5A, 750mA
Maximum Total Gate Charge2.5nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 74% from Suppliers use this Dimension
Package TypeSOT-563
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge350pC, 400pC
Typical Gate to Source Charge200pC, 300pC