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NTTFS8D1N08HTAG
onsemi

NTTFS8D1N08HTAG

MFR #NTTFS8D1N08HTAG

FPN#NTTFS8D1N08HTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 80V 14A (Ta) 61A (Tc) 3.2W (Ta) 63W (Tc) Surface Mount, 8-WDFN
Datasheet
56905-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS8D1N08H
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1450pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive
Maximum Continuous Drain Current14A (Ta), 61A (Tc)
Maximum Drain to Source Resistance8.3 mOhm @ 16A, 10V
Maximum Gate to Source Threshold Voltage4V @ 80µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3.2W (Ta), 63W (Tc)
Maximum Pulse Drain Current216A
Maximum Total Gate Charge23nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.2nC
Typical Gate to Source Charge7.2nC