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NTTFS6H888NTAG
onsemi

NTTFS6H888NTAG

MFR #NTTFS6H888NTAG

FPN#NTTFS6H888NTAG-FL

MFRonsemi

Part DescriptionN-Channel 80 V 4.7A (Ta), 12A (Tc) 2.9W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet
56904-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS6H888N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance220pF
Input Capacitance Test Voltage40V
Life Cycle StatusObsolete
Maximum Continuous Drain Current4.7A (Ta), 12A (Tc)
Maximum Drain to Source Resistance55 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage4V @ 15µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation2.9W (Ta), 18W (Tc)
Maximum Pulse Drain Current47A
Maximum Total Gate Charge4.7nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge900pC
Typical Gate to Source Charge1.7nC