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NTTFS6H880NLTAG
MFR #NTTFS6H880NLTAG
FPN#NTTFS6H880NLTAG-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 80 V 6.6A (Ta), 22A (Tc) 3.1W (Ta), 33W (Tc) Surface Mount, 8-WDFN
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTTFS6H880NL |
Packaging Type | Tape and Reel |
Packaging Quantity | 1500 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 80V |
Drive Voltage | 4.5V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 431pF |
Input Capacitance Test Voltage | 40V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 6.6A (Ta), 22A (Tc) |
Maximum Drain to Source Resistance | 29 mOhm @ 5A, 10V |
Maximum Gate to Source Threshold Voltage | 2V @ 20µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 3.1W (Ta), 33W (Tc) |
Maximum Pulse Drain Current | 83A |
Maximum Total Gate Charge | 9nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 8-WDFN (3.3x3.3) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 1.5nC |
Typical Gate to Source Charge | 1.7nC |