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NTTFS6H880NLTAG

NTTFS6H880NLTAG

MFR #NTTFS6H880NLTAG

FPN#NTTFS6H880NLTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 80 V 6.6A (Ta), 22A (Tc) 3.1W (Ta), 33W (Tc) Surface Mount, 8-WDFN
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS6H880NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance431pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current6.6A (Ta), 22A (Tc)
Maximum Drain to Source Resistance29 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage2V @ 20µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.1W (Ta), 33W (Tc)
Maximum Pulse Drain Current83A
Maximum Total Gate Charge9nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.5nC
Typical Gate to Source Charge1.7nC