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NTTFS5C658NLTAG-01

NTTFS5C658NLTAG-01

MFR #NTTFS5C658NLTAG-01

FPN#NTTFS5C658NLTAG-01-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 18A(Ta) 109A(Tc) Surface Mount, 8-WDFN
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS5C658NL
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1935pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current18A (Ta), 109A (Tc)
Maximum Drain to Source Resistance5 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 75µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.2W (Ta), 114W (Tc)
Maximum Pulse Drain Current440A
Maximum Total Gate Charge27nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.4nC
Typical Gate to Source Charge7nC