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NTTFS4C08NTAG
MFR #NTTFS4C08NTAG
FPN#NTTFS4C08NTAG-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 30V 9.3A(Ta) 820mW(Ta) 25.5W(Tc) Surface Mount, 8-WDFN
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTTFS4C08N |
Packaging Type | Tape and Reel |
Packaging Quantity | 1500 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 30V |
Drive Voltage | 4.5V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 1113pF |
Input Capacitance Test Voltage | 15V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 9.3A (Ta), 52A (Tc) |
Maximum Drain to Source Resistance | 5.9 mOhm @ 30A, 10V |
Maximum Gate to Source Threshold Voltage | 2.2V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 820mW (Ta), 25.5W (Tc) |
Maximum Pulse Drain Current | 144A |
Maximum Total Gate Charge | 35nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 8-WDFN (3.3x3.3) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 3.3nC |
Typical Gate to Source Charge | 3.5nC |