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onsemi
NTTFS4C08NTAG-01
MFR #NTTFS4C08NTAG-01
FPN#NTTFS4C08NTAG-01-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 30V 9.3A (Ta) 820mW (Ta) 25.5W (Tc) Surface Mount, 8-WDFN
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTTFS4C08N |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | RoHS (2015/863), Unknown |
| Reach Status | Compliant |
| Package Type | 8-WDFN (3.3x3.3) |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 1113pF |
| Input Capacitance Test Voltage | 15V |
| Maximum Continuous Drain Current | 9.3A (Ta) |
| Maximum Drain to Source Resistance | 5.9 mOhm @ 30A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.2V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 820mW (Ta), 25.5W (Tc) |
| Maximum Pulse Drain Current | 144A |
| Maximum Total Gate Charge | 35nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 3.3nC |
| Typical Gate to Source Charge | 3.5nC |