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NTTFS4C08NTAG-01
onsemi

NTTFS4C08NTAG-01

MFR #NTTFS4C08NTAG-01

FPN#NTTFS4C08NTAG-01-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 9.3A (Ta) 820mW (Ta) 25.5W (Tc) Surface Mount, 8-WDFN
Datasheet
99078-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS4C08N
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1113pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current9.3A (Ta)
Maximum Drain to Source Resistance5.9 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation820mW (Ta), 25.5W (Tc)
Maximum Pulse Drain Current144A
Maximum Total Gate Charge35nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.3nC
Typical Gate to Source Charge3.5nC