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NTTFS4C06NTWG-01
onsemi

NTTFS4C06NTWG-01

MFR #NTTFS4C06NTWG-01

FPN#NTTFS4C06NTWG-01-FL

MFRonsemi

Part DescriptionN-Channel 30 V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet
100826-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS4C06N
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3366pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current11A (Ta), 67A (Tc)
Maximum Drain to Source Resistance4.2 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation810mW (Ta), 31W (Tc)
Maximum Pulse Drain Current166A
Maximum Total Gate Charge36nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4nC
Typical Gate to Source Charge4.7nC