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NTTFS4985NFTWG
onsemi

NTTFS4985NFTWG

MFR #NTTFS4985NFTWG

FPN#NTTFS4985NFTWG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 16.3A (Ta), 64A (Tc) 8-SON
Datasheet
137227-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS4985NF
Packaging TypeTape and Reel
Packaging Quantity5000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2075pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current16.3A (Ta), 64A (Tc)
Maximum Drain to Source Resistance3.5 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage2.3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.47W (Ta), 22.73W (Tc)
Maximum Pulse Drain Current192A
Maximum Total Gate Charge29.4nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.1nC
Typical Gate to Source Charge4.1nC