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NTTFS3A08PZTWG
onsemi

NTTFS3A08PZTWG

MFR #NTTFS3A08PZTWG

FPN#NTTFS3A08PZTWG-FL

MFRonsemi

Part DescriptionMOSFET P-Channel Single 20V 9A (Ta) 8-SON
Datasheet
56883-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS3A08PZ
Packaging TypeTape and Reel
Packaging Quantity5000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance5000pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current9A (Ta)
Maximum Drain to Source Resistance6.7 mOhm @ 12A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation840mW (Ta)
Maximum Pulse Drain Current46A
Maximum Total Gate Charge56nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge14nC
Typical Gate to Source Charge14nC