(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTTFS1D8N02P1E
onsemi

NTTFS1D8N02P1E

MFR #NTTFS1D8N02P1E

FPN#NTTFS1D8N02P1E-FL

MFRonsemi

Part DescriptionN-Channel 25 V 20A (Ta), 152A (Tc) 800mW (Ta), 48W (Tc) Surface Mount 8-PQFN (3.3x3.3)
Datasheet
99074-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS1D8N02P1E
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+16V, -12V
Input Capacitance3159pF
Input Capacitance Test Voltage13V
Life Cycle StatusActive
Maximum Continuous Drain Current20A (Ta), 152A (Tc)
Maximum Drain to Source Resistance1.3 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2V @ 700µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation800mW (Ta), 48W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge38nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.8nC
Typical Gate to Source Charge7.6nC