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NTTFS080N10GTAG
onsemi

NTTFS080N10GTAG

MFR #NTTFS080N10GTAG

FPN#NTTFS080N10GTAG-FL

MFRonsemi

Part DescriptionN-Channel 100 V 4.1A (Ta), 16A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet
56882-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS080N10G
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance560.5pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current4.1A (Ta), 16A (Tc)
Maximum Drain to Source Resistance72 mOhm @ 4A, 10V
Maximum Gate to Source Threshold Voltage4V @ 22µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation2.5W (Ta), 39W (Tc)
Maximum Pulse Drain Current125A
Maximum Total Gate Charge8.6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC
Typical Gate to Source Charge3.2nC