(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTTFS030N10GTAG
onsemi

NTTFS030N10GTAG

MFR #NTTFS030N10GTAG

FPN#NTTFS030N10GTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 6A(Ta) 35A(Tc) 2.5W(Ta) 74W(Tc) Surface Mount, 8-WDFN
Datasheet
56881-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS030N10G
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1366pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current6A (Ta), 35A (Tc)
Maximum Drain to Source Resistance30 mOhm @ 12A, 10V
Maximum Gate to Source Threshold Voltage4V @ 61µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.5W (Ta), 74W (Tc)
Maximum Pulse Drain Current306A
Maximum Total Gate Charge21.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.7nC
Typical Gate to Source Charge8.4nC