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NTTFS015P03P8ZTAG
onsemi

NTTFS015P03P8ZTAG

MFR #NTTFS015P03P8ZTAG

FPN#NTTFS015P03P8ZTAG-FL

MFRonsemi

Part DescriptionP-Channel 30 V 13.4A (Ta), 47.6A (Tc) 2.66W (Ta), 33.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Datasheet
56879-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS015P03P8Z
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance2706pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current13.4A (Ta), 47.6A (Tc)
Maximum Drain to Source Resistance9.3 mOhm @ 12A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.66W (Ta), 33.8W (Tc)
Maximum Pulse Drain Current195A
Maximum Total Gate Charge62.3nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge21.7nC
Typical Gate to Source Charge8.2nC