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onsemi

NTTFD9D0N06HLTWG

MFR #NTTFD9D0N06HLTWG

FPN#NTTFD9D0N06HLTWG-FL

MFRonsemi

Part DescriptionMOSFET 2N-CH 60V 9A 12WQFN
Datasheet
148905-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFD9D0N06HL
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type12-WQFN (3.3x3.3)
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance948pF
Input Capacitance Test Voltage30V
Maximum Continuous Drain Current9A (Ta), 38A (Tc)
Maximum Drain to Source Resistance9 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage2V @ 50µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.7W (Ta), 26W (Tc)
Maximum Pulse Drain Current349A
Maximum Total Gate Charge13.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.8nC
Typical Gate to Source Charge2.6nC