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onsemi

NTTFD4D1N03P1E

MFR #NTTFD4D1N03P1E

FPN#NTTFD4D1N03P1E-FL

MFRonsemi

Part DescriptionMOSFET 2N-CH 30V 12A 12WQFN
Datasheet
168619-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFD4D1N03P1E
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type12-WQFN (3.3x3.3)
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage+16V, -12V
Input Capacitance1103pF, 972pF
Input Capacitance Test Voltage15V
Maximum Continuous Drain Current12A (Ta), 54A (Tc)
Maximum Drain to Source Resistance4.3 mOhm @ 10A, 10V, 3.5 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 270µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1W (Ta), 20W (Tc)
Maximum Pulse Drain Current408A
Maximum Total Gate Charge15nC, 14nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.4nC
Typical Gate to Source Charge2.8nC, 2.5nC