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NTTFD1D8N02P1E
MFR #NTTFD1D8N02P1E
FPN#NTTFD1D8N02P1E-FL
MFRonsemi
Part DescriptionMOSFET, Power, Dual 25V N-Channel, Power Clip, Asymmetric, 4.2m HS, 1.4m LS, PQFN12 3.3x3.3mm
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTTFD1D8N02P1E |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 25V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Standard |
| FET Options | Asymmetrical |
| FET Type | Array |
| Gate to Source Voltage | +16V, -12V |
| Input Capacitance | 873pF, 2700pF |
| Input Capacitance Test Voltage | 13V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 11A (Ta), 21A (Ta) |
| Maximum Drain to Source Resistance | 4.2 mOhm @ 15A, 10V, 1.4 mOhm @ 29A, 10V |
| Maximum Gate to Source Threshold Voltage | 2V @ 190µA, 2V @ 310µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 800mW (Ta), 900mW (Ta) |
| Maximum Pulse Drain Current | 483A, 861A |
| Maximum Total Gate Charge | 5.5nC, 17nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-PQFN (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 1nC, 2.7nC |
| Typical Gate to Source Charge | 2.4nC, 7.3nC |