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onsemi

NTTFD022N10C

MFR #NTTFD022N10C

FPN#NTTFD022N10C-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) 100V 6A (Ta), 24A (Tc) 1.7W (Ta), 26W (Tc) Surface Mount 12-WQFN (3.3x3.3)
Datasheet
56872-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFD022N10C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance585pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current6A (Ta), 24A (Tc)
Maximum Drain to Source Resistance25 mOhm @ 7.8A, 10V
Maximum Gate to Source Threshold Voltage4V @ 44µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.7W (Ta), 26W (Tc)
Maximum Pulse Drain Current349A
Maximum Total Gate Charge9nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type12-WQFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC
Typical Gate to Source Charge2.67nC