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NTTBC070NP10M5L
MFR #NTTBC070NP10M5L
FPN#NTTBC070NP10M5L-FL
MFRonsemi
Part DescriptionMOSFET N and P-Channel 100V 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc) Surface Mount, 8-WDFN
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTTBC070NP10M5L |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Active |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | N and P-Channel |
Drain Source Voltage | 100V |
Drive Voltage | 4.5V, 10V, 6V, 10V |
FET Feature | Standard |
FET Options | N/R |
FET Type | Array |
Gate to Source Voltage | ±20V |
Input Capacitance | 252pF, 256pF |
Input Capacitance Test Voltage | 50V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc) |
Maximum Drain to Source Resistance | 70 mOhm @ 1.3A, 10V, 186 mOhm @ 2.2A, 10V |
Maximum Gate to Source Threshold Voltage | 3V @ 24µA, 4V @ 40µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc) |
Maximum Pulse Drain Current | 33A |
Maximum Total Gate Charge | 5.6nC, 7.3nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 8-WDFN (3x3) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 1.1nC, 1.2nC |
Typical Gate to Source Charge | 1nC, 2.4nC |