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NTTBC070NP10M5L

NTTBC070NP10M5L

MFR #NTTBC070NP10M5L

FPN#NTTBC070NP10M5L-FL

MFRonsemi

Part DescriptionMOSFET N and P-Channel 100V 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc) Surface Mount, 8-WDFN
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTBC070NP10M5L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V, 6V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance252pF, 256pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
Maximum Drain to Source Resistance70 mOhm @ 1.3A, 10V, 186 mOhm @ 2.2A, 10V
Maximum Gate to Source Threshold Voltage3V @ 24µA, 4V @ 40µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)
Maximum Pulse Drain Current33A
Maximum Total Gate Charge5.6nC, 7.3nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3x3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.1nC, 1.2nC
Typical Gate to Source Charge1nC, 2.4nC