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NTS2101PT1G
MFR #NTS2101PT1G
FPN#NTS2101PT1G-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 8V 1.4A (Ta) 290mW (Ta) Surface Mount, SC-70-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTS2101P |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 8V |
| Drive Voltage | 1.8V, 4.5V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±8V |
| Input Capacitance | 640pF |
| Input Capacitance Test Voltage | 8V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 1.4A (Ta) |
| Maximum Drain to Source Resistance | 100 mOhm @ 1A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 700mV @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 290mW (Ta) |
| Maximum Pulse Drain Current | 3A |
| Maximum Total Gate Charge | 6.4nC |
| Maximum Total Gate Charge Test Voltage | 5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | SC-70 (SOT323) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 1nC |
| Typical Gate to Source Charge | 1nC |