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NTR4171PT1G
onsemi

NTR4171PT1G

MFR #NTR4171PT1G

FPN#NTR4171PT1G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel Single 30V 2.2A (Ta) Surface Mount, TO-236-3
Datasheet
56826-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTR4171P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage2.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance720pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current2.2A (Ta)
Maximum Drain to Source Resistance75 mOhm @ 2.2A, 10V
Maximum Gate to Source Threshold Voltage1.4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation480mW (Ta)
Maximum Pulse Drain Current15A
Maximum Total Gate Charge15.6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.6nC
Typical Gate to Source Charge1.6nC