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NTR4170NT1G
onsemi

NTR4170NT1G

MFR #NTR4170NT1G

FPN#NTR4170NT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 2.4A (Ta) 480mW (Ta) Surface Mount, SOT-236-3
Datasheet
56825-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTR4170N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage2.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance432pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current2.4A (Ta)
Maximum Drain to Source Resistance55 mOhm @ 3.2A, 10V
Maximum Gate to Source Threshold Voltage1.4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation480mW (Ta)
Maximum Pulse Drain Current8A
Maximum Total Gate Charge4.76nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.4nC
Typical Gate to Source Charge1nC