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NTR4101PT1G
onsemi

NTR4101PT1G

MFR #NTR4101PT1G

FPN#NTR4101PT1G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount, SOT-23-3
Datasheet
56824-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTR4101P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance675pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current1.8A (Ta)
Maximum Drain to Source Resistance85 mOhm @ 1.6A, 4.5V
Maximum Gate to Source Threshold Voltage1.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation420mW (Ta)
Maximum Pulse Drain Current18A
Maximum Total Gate Charge8.5nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.2nC
Typical Gate to Source Charge1.2nC