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NTR2101PT1G
onsemi

NTR2101PT1G

MFR #NTR2101PT1G

FPN#NTR2101PT1G-FL

MFRonsemi

Part DescriptionP-Channel 8V 3.7A (Ta) 960mW (Ta) Surface Mount, SOT-23-3
Datasheet
56821-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTR2101P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage8V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance1173pF
Input Capacitance Test Voltage4V
Life Cycle StatusActive
Maximum Continuous Drain Current3.7A (Ta)
Maximum Drain to Source Resistance52 mOhm @ 3.5A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation960mW (Ta)
Maximum Pulse Drain Current11A
Maximum Total Gate Charge15nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.5nC
Typical Gate to Source Charge3.8nC