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NTPF450N80S3Z
onsemi

NTPF450N80S3Z

MFR #NTPF450N80S3Z

FPN#NTPF450N80S3Z-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 800V 11A (Tj) 29.5W (Tc) Through Hole, TO-220-3
Datasheet
149496-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTPF450N80S3Z
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage800V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance885pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current11A (Tj)
Maximum Drain to Source Resistance450 mOhm @ 5.5A, 10V
Maximum Gate to Source Threshold Voltage3.8V @ 240µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation29.5W (Tc)
Maximum Pulse Drain Current25A
Maximum Total Gate Charge19.3nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3 Fullpack/TO-220F-3SG
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.6nC
Typical Gate to Source Charge4.2nC