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NTPF190N65S3H
onsemi

NTPF190N65S3H

MFR #NTPF190N65S3H

FPN#NTPF190N65S3H-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 16A (Tj) TO-220-3 Tube
Datasheet
99338-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTPF190N65S3H
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1600pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current16A (Tj)
Maximum Drain to Source Resistance190 mOhm @ 8A, 10V
Maximum Gate to Source Threshold Voltage4V @ 1.4mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation32W (Tc)
Maximum Pulse Drain Current45A
Maximum Total Gate Charge31nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220FP
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.9nC
Typical Gate to Source Charge7.1nC