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NTPF125N65S3H
onsemi

NTPF125N65S3H

MFR #NTPF125N65S3H

FPN#NTPF125N65S3H-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 24A(Tj) Through Hole, TO-220-3
Datasheet
99337-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTPF125N65S3H
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance2200pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current24A (Tj)
Maximum Drain to Source Resistance125 mOhm @ 12A, 10V
Maximum Gate to Source Threshold Voltage4V @ 2.1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation37W (Tc)
Maximum Pulse Drain Current67A
Maximum Total Gate Charge44nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220FP
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge12nC
Typical Gate to Source Charge11nC