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NTP5862NG
onsemi

NTP5862NG

MFR #NTP5862NG

FPN#NTP5862NG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60 V 98A (Tc) Through Hole TO-220-3
Datasheet
63835-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTP5862N
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance6000pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current98A (Tc)
Maximum Drain to Source Resistance5.7 mOhm @ 45A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation115W (Tc)
Maximum Pulse Drain Current335A
Maximum Total Gate Charge82nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge27nC
Typical Gate to Source Charge24nC