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onsemi

NTNS4C69NTCG

MFR #NTNS4C69NTCG

FPN#NTNS4C69NTCG-FL

MFRonsemi

Part DescriptionN-Channel 30 V 1A (Ta) 178mW (Ta) Surface Mount SOT-883 (XDFN3) (1x0.6)
Datasheet
56810-Datasheet
Quote Onlymore info
Multiples of: 8000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTNS4C69N
Packaging TypeTape and Reel
Packaging Quantity8000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance75pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current1A (Ta)
Maximum Drain to Source Resistance155 mOhm @ 300mA, 4.5V
Maximum Gate to Source Threshold Voltage1.1V @ 10µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation178mW (Ta)
Maximum Pulse Drain Current2.6mA
Maximum Total Gate Charge900pC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-883 (XDFN3) (1x0.6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge100pC
Typical Gate to Source Charge200pC