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onsemi

NTNS3A65PZT5GHW

MFR #NTNS3A65PZT5GHW

FPN#NTNS3A65PZT5GHW-FL

MFRonsemi

Part DescriptionP-Channel 20 V 281mA (Ta) 155mW (Ta) Surface Mount SOT-883 (XDFN3) (1x0.6)
Datasheet
56807-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTNS3A65PZ
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance44pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current281mA (Ta)
Maximum Drain to Source Resistance1.3 Ohm @ 200mA, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation155mW (Ta)
Maximum Pulse Drain Current842mA
Maximum Total Gate Charge1.1nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-883 (XDFN3) (1x0.6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge200pC
Typical Gate to Source Charge200pC