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onsemi

NTNS0K8N021ZTCG

MFR #NTNS0K8N021ZTCG

FPN#NTNS0K8N021ZTCG-FL

MFRonsemi

Part DescriptionN-Channel 20 V 220mA (Ta) 125mW (Ta) Surface Mount 3-XDFN (0.42x0.62)
Datasheet
137226-Datasheet
Quote Onlymore info
Multiples of: 8000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTNS0K8N021Z
Packaging TypeTape and Reel
Packaging Quantity8000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage20V
Drive Voltage1.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance12.3pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current220mA (Ta)
Maximum Drain to Source Resistance1.5 Ohm @ 100mA, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation125mW (Ta)
Maximum Pulse Drain Current846mA
Maximum Total Gate ChargeN/A
Maximum Total Gate Charge Test VoltageN/A
Minimum Junction Temperature-55°C (TJ)
Package Type3-XDFN (0.42x0.62)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A