NTMYS9D3N06CLTWG
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTMYS9D3N06CL |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | 20V |
| Input Capacitance | 880pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 14A (Ta), 50A (Tc) |
| Maximum Drain to Source Resistance | 9.2 mOhm @ 25A, 10V |
| Maximum Gate to Source Threshold Voltage | 2V @ 35µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 3.6W (Ta), 46W (Tc) |
| Maximum Pulse Drain Current | 290A |
| Maximum Total Gate Charge | 9.5nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 4-LFPAK |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 800pC |
| Typical Gate to Source Charge | 2nC |