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NTMYS013N08LHTWG
onsemi

NTMYS013N08LHTWG

MFR #NTMYS013N08LHTWG

FPN#NTMYS013N08LHTWG-FL

MFRonsemi

Part Descriptiononsemi Power MOSFET 80 V, 42A, 13.1mO Single N-Channel
Datasheet
56790-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMYS013N08LH
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance906pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current11A (Ta), 42A (Tc)
Maximum Drain to Source Resistance13.1 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage2V @ 45µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.6W (Ta), 54W (Tc)
Maximum Pulse Drain Current208A
Maximum Total Gate Charge17nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type4-LFPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.9nC
Typical Gate to Source Charge3.1nC