onsemi
NTMYS006N08LHTWG
MFR #NTMYS006N08LHTWG
FPN#NTMYS006N08LHTWG-FL
MFRonsemi
Part DescriptionPower Field-Effect Transistor, 77A I(D), 80V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTMYS006N08LH |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 80V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 1950pF |
| Input Capacitance Test Voltage | 40V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 16A (Ta), 77A (Tc) |
| Maximum Drain to Source Resistance | 6.2 mOhm @ 15A, 10V |
| Maximum Gate to Source Threshold Voltage | 2V @ 95µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 3.7W (Ta), 89W (Tc) |
| Maximum Pulse Drain Current | 449A |
| Maximum Total Gate Charge | 34nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 4-LFPAK |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 5.5nC |
| Typical Gate to Source Charge | 6.3nC |