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NTMYS003N08LHTWG
onsemi

NTMYS003N08LHTWG

MFR #NTMYS003N08LHTWG

FPN#NTMYS003N08LHTWG-FL

MFRonsemi

Part DescriptionPower MOSFET 80 V, 132 A, 3.3m? Single N-Channel, LFPAK-4
Datasheet
56787-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMYS003N08LH
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3735pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current22A (Ta), 132A (Tc)
Maximum Drain to Source Resistance3.3 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage2V @ 183µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.8W (Ta), 137W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge64nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type4-LFPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge10.5nC
Typical Gate to Source Charge11.1nC