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NTMTS1D6N10MCTXG
onsemi

NTMTS1D6N10MCTXG

MFR #NTMTS1D6N10MCTXG

FPN#NTMTS1D6N10MCTXG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 36A (Ta), 273A (Tc) 8-SON T/R
Datasheet
99066-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMTS1D6N10MCTXG
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance7630pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current36A (Ta), 273A (Tc)
Maximum Drain to Source Resistance1.7 mOhm @ 90A, 10V
Maximum Gate to Source Threshold Voltage4V @ 650µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation5W (Ta), 291W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge106nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-DFNW (8.3x8.4)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge22nC
Typical Gate to Source Charge35nC