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NTMTS1D5N08H
onsemi

NTMTS1D5N08H

MFR #NTMTS1D5N08H

FPN#NTMTS1D5N08H-FL

MFRonsemi

Part DescriptionMOSFET-Single Power N-Channel 80 V 36A (Ta), 255A (Tc) 4.2W (Ta), 208W (Tc) Surface Mount 8-DFNW
Datasheet
56784-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMTS1D5N08H
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance8220pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current36A (Ta), 255A (Tc)
Maximum Drain to Source Resistance1.5 mOhm @ 90A, 10V
Maximum Gate to Source Threshold Voltage4V @ 490µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation4.2W (Ta), 208W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge125nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFNW (8.3x8.4)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge29nC
Typical Gate to Source Charge34nC