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NTMTS0D6N04CTXG
onsemi

NTMTS0D6N04CTXG

MFR #NTMTS0D6N04CTXG

FPN#NTMTS0D6N04CTXG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 40V 533A (Tc) 5W Surface Mount, 8-DFNW
Datasheet
56780-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMTS0D6N04C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance11800pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive
Maximum Continuous Drain Current76A (Ta), 533A (Tc)
Maximum Drain to Source Resistance480 µOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation5W (Ta), 245W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge187nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFNW (8.3x8.4)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge38.2nC
Typical Gate to Source Charge46.6nC