(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTMTS001N06CTXG
onsemi

NTMTS001N06CTXG

MFR #NTMTS001N06CTXG

FPN#NTMTS001N06CTXG-FL

MFRonsemi

Datasheet
99065-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMTS001N06C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance8705pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current53.7A (Ta), 376A (Tc)
Maximum Drain to Source Resistance910 µOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation5W (Ta), 244W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge113nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFNW (8.3x8.4)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge16.3nC
Typical Gate to Source Charge31.2nC