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NTMTS001N06CTXG
onsemi

NTMTS001N06CTXG

MFR #NTMTS001N06CTXG

FPN#NTMTS001N06CTXG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 53.7A (Ta), 376A (Tc) 8-SON
Datasheet
99065-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMTS001N06C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance8705pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current53.7A (Ta), 376A (Tc)
Maximum Drain to Source Resistance910 µOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation5W (Ta), 244W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge113nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-DFNW (8.3x8.4)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge16.3nC
Typical Gate to Source Charge31.2nC