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NTMS4816NR2G
onsemi

NTMS4816NR2G

MFR #NTMS4816NR2G

FPN#NTMS4816NR2G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 6.8A (Ta) 780mW (Ta) Surface Mount, 8-SOIC
Datasheet
102542-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMS4816N
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1060pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current6.8A (Ta)
Maximum Drain to Source Resistance10 mOhm @ 9A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation780mW (Ta)
Maximum Pulse Drain Current33A
Maximum Total Gate Charge18.3nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 61% from Suppliers use this Dimension
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.8nC
Typical Gate to Source Charge3.8nC