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NTMS4177PR2G
onsemi

NTMS4177PR2G

MFR #NTMS4177PR2G

FPN#NTMS4177PR2G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 30 V 6.6A (Ta) 840mW (Ta) Surface Mount, 8-SOIC
Datasheet
56774-Datasheet
Quote Only
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Multiples of: 2500
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMS4177P
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package Type8-SOIC
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3100pF
Input Capacitance Test Voltage24V
Maximum Continuous Drain Current6.6A (Ta)
Maximum Drain to Source Resistance12 mOhm @ 11.4A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation840mW (Ta)
Maximum Pulse Drain Current46A
Maximum Total Gate Charge55nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 61% from Suppliers use this Dimension
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge13nC
Typical Gate to Source Charge10nC