NTMS10P02R2G
MFR #NTMS10P02R2G
FPN#NTMS10P02R2G-FL
MFRonsemi
Part DescriptionP-Channel 20 V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTMS10P02R2 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 2.5V, 4.5V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±12V |
| Input Capacitance | 3640pF |
| Input Capacitance Test Voltage | 16V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 8.8A (Ta) |
| Maximum Drain to Source Resistance | 14 mOhm @ 10A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.2V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 1.6W (Ta) |
| Maximum Pulse Drain Current | 50A |
| Maximum Total Gate Charge | 70nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| PK Package Dimensions Note | Popular package size 61% from Suppliers use this Dimension |
| Package Type | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 17nC |
| Typical Gate to Source Charge | 6.5nC |