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NTMJS1D4N06CLTWG
onsemi

NTMJS1D4N06CLTWG

MFR #NTMJS1D4N06CLTWG

FPN#NTMJS1D4N06CLTWG-FL

MFRonsemi

Part DescriptionMOSFET N-CH 60V 39A/262A 8LFPAK
Datasheet
165737-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMJS1D4N06CL
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type8-LFPAK
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance7430pF
Input Capacitance Test Voltage30V
Maximum Continuous Drain Current39A (Ta), 262A (Tc)
Maximum Drain to Source Resistance1.3 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage2V @ 280µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation4W (Ta), 180W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge103nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11nC
Typical Gate to Source Charge17nC