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NTMJS1D15N03CGTWG
onsemi

NTMJS1D15N03CGTWG

MFR #NTMJS1D15N03CGTWG

FPN#NTMJS1D15N03CGTWG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 45A(Ta) 257A(Tc) 3.8W(Ta) 125W(Tc) Surface Mount, SOT-1205
Datasheet
56772-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMJS1D15N03CG
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance7300pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current45A (Ta), 257A (Tc)
Maximum Drain to Source Resistance1.15 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 160µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 125W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge94nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-LFPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.9nC
Typical Gate to Source Charge19nC