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NTMFS5H414NLT1G
onsemi

NTMFS5H414NLT1G

MFR #NTMFS5H414NLT1G

FPN#NTMFS5H414NLT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 40V 35A(Ta) 210A(Tc) 3.1W(Ta) 110W(Tc) Surface Mount, 5-DFN
Datasheet
99527-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS5H414NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance4550pF
Input Capacitance Test Voltage20V
Life Cycle StatusObsolete
Maximum Continuous Drain Current35A (Ta), 210A (Tc)
Maximum Drain to Source Resistance1.4 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.1W (Ta), 110W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge75nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge10nC
Typical Gate to Source Charge11.5nC